Mechanisms for forming ultra shallow junction

ABSTRACT

A fin field-effect transistor (FinFET) includes a substrate and a fin structure over the substrate. The fin structure comprises a lightly doped source and drain (LDD) region uniformly beneath a top surface and sidewall surfaces of the fin structure, the LDD region having a depth less than about 25 nm. Another FinFET includes a substrate and a fin structure over the substrate. The fin structure comprises a lightly doped source and drain (LDD) region, and a top surface of the fin structure has a different crystal structure from a sidewall surface of the fin structure. A method of making a FinFET includes forming a fin structure on a substrate. The method further includes performing a pulsed plasma doping on the fin structure to form lightly doped drain (LDD) regions in the fin structure.

PRIORITY CLAIM

The present application is a continuation of U.S. application Ser. No. 13/650,684, filed Oct. 12, 2012, which is a continuation of U.S. application Ser. No. 12/941.509, filed Nov. 8, 2010, now U.S. Pat. No. 8,298,925, which are incorporated herein by reference in their entireties.

RELATED APPLICATIONS

The present application is related to U.S. patent application Ser. Nos. 12/707,788, filed on Feb. 18, 2010, (Docket Nos. TSMC2008-0432, T5057-R007U), titled MEMORY POWER GATING CIRCUIT AND METHODS; Ser. No. 12/758,426, filed on Apr. 12, 2010, (Docket Nos. TSMC2008-0582, T5057-Y048U), titled FINFETS AND METHODS FOR FORMING THE SAME; Ser. No. 12/731,325, filed on Mar. 25, 2010, (Docket Nos. TSMC2008-0597, T5057-B033U), titled ELECTRICAL FUSE AND RELATED APPLICATIONS; Ser. No. 12/724,556, filed on Mar. 16, 2010, (Docket Nos. TSMC2008-0598, T5057-K002U), titled ELECTRICAL ANTI-FUSE AND RELATED APPLICATIONS; Ser. No. 12/757,203, filed on Apr. 9, 2010, (Docket Nos. TSMC2009-0148, T5057-Y085U), titled STI STRUCTURE AND METHOD OF FORMING BOTTOM VOID IN SAME; Ser. No. 12/797,839, filed on Jun. 10, 2010, (Docket Nos. TSMC2009-0278, T5057-K099U), titled FIN STRUCTURE FOR HIGH MOBILITY MULTIPLE-GATE TRANSISTOR; Ser. No. 12/831,842, filed on Jul. 7, 2010, (Docket Nos. TSMC2009-0343, T5057-Y093U), titled METHOD FOR FORMING HIGH GERMANIUM CONCENTRATION SiGe STRESSOR; Ser. No. 12/761,686, filed on Apr. 16, 2010, (Docket Nos. TSMC2009-0442, T5057-Y125U), titled FINFETS AND METHODS FOR FORMING THE SAME; Ser. No. 12/766,233, filed on Apr. 23, 2010, (Docket Nos. TSMC2009-0444, T5057-K123U), titled FIN FIELD EFFECT TRANSISTOR; Ser. No. 12/757,271, filed on Apr. 9, 2010, (Docket Nos. TSMC2009-0445, T5057-Y113U), titled ACCUMULATION TYPE FINFET, CIRCUITS AND FABRICATION METHOD THEREOF; Ser. No. 12/694,846, filed on Jan. 27, 2010, (Docket Nos. TSMC2009-0646, T5057-Y165), titled INTEGRATED CIRCUITS AND METHODS FOR FORMING THE SAME; Ser. No. 12/638,958, filed on Dec. 14, 2009, (Docket Nos. TSMC2009-0738, T5057-B166), titled METHOD OF CONTROLLING GATE THICKNESS IN FORMING FINFET DEVICES; Ser. No. 12/768,884, filed on Apr. 28, 2010, (Docket Nos. TSMC2010-0028, T5057-Y228), titled METHODS FOR DOPING FIN FIELD-EFFECT TRANSISTORS; Ser. No. 12/731,411, filed on Mar. 25, 2010, (Docket Nos. TSMC2010-0057, T5057-B218), titled INTEGRATED CIRCUIT INCLUDING FINFETS AND METHODS FOR FORMING THE SAME; Ser. No. 12/775,006, filed on May 6, 2010, (Docket Nos. TSMC2010-0198, T5057-Y246), titled METHOD FOR FABRICATING A STRAINED STRUCTURE; Ser. No. 12/886,713, filed Sep. 21, 2010, (Docket Nos. TSMC2010-0646, T5057-B325), titled METHOD OF FORMING INTEGRATED CIRCUITS; Ser. No. 12/941,509, filed Nov. 8, 2010, (Docket Nos. TSMC2010-0561, T5057-B337), titled MECHANISMS FOR FORMING ULTRA SHALLOW JUNCTION; Ser. No. 12/900,626, filed Oct. 8, 2010, (Docket Nos. TSMC2010-0581, T5057-B330), titled TRANSISTOR HAVING NOTCHED FIN STRUCTURE AND METHOD OF MAKING THE SAME; Ser. No. 12/903,712, filed Oct. 13, 2010, (Docket Nos. TSMC2010-0731, T5057-R350), titled FINFET AND METHOD OF FABRICATING THE SAME; 61/412,846, filed Nov. 12, 2010, (Docket Nos. TSMC2010-0839, T5057-B388PRO), 61/394,418, filed Oct. 19, 2010, (Docket Nos. TSMC2010-0926, T5057-Y351PRO), titled METHODS OF FORMING GATE DIELECTRIC MATERIAL and 61/405,858, filed Oct. 22, 2010, (Docket Nos. TSMC2010-0928, T5057-R368PRO), titled METHODS OF FORMING SEMICONDUCTOR DEVICES.

FIELD

This disclosure relates generally to integrated circuit devices and more particularly to processes of doping for field-effect transistors (FETs).

BACKGROUND

Semiconductor integrated circuit microelectronic fabrications are formed from semiconductor substrates within and upon which are formed semiconductor devices. Patterned conductor layers separated by dielectric layers are then formed over the semiconductor substrates to provide interconnect. Ubiquitous within the fabrication of semiconductor integrated circuit microelectronic fabrications is the use of field effect transistor (FET) devices as switching devices within both logic semiconductor integrated circuit microelectronic fabrications and memory semiconductor integrated circuit microelectronic fabrications. The accelerated shrinking of FET dimensions poses particular challenges for doping processes used in transistor fabrication. Dopant ion implantation by ion beams has widely been used to locally modify the electrical properties of silicon. However, ion implantation by ion beams has its limitations for meeting specifications of advanced devices.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will be readily understood by the following detailed description in conjunction with the accompanying drawings, and like reference numerals designate like structural elements.

FIG. 1A shows an integrated circuit structure, in accordance with some embodiments.

FIG. 1B shows dopant ions being directed toward a substrate and implanted into fin structures to form implanted regions, in accordance with some embodiments.

FIG. 1C shows dopant plasma ions directed toward a substrate and implanted into fin structures to form implanted regions, in accordance with some embodiments.

FIG. 2A shows two dopant profiles for two substrates with two different orientations by using a plasma doping process, in accordance with some embodiments.

FIG. 2B shows RF power for pulsed plasma as a function of time, in accordance with some embodiments.

FIG. 2C shows two dopant profiles for two substrates with two different orientations by using another plasma doping process, in accordance with some embodiments.

FIG. 2D shows resistivity of fin structures as a function of process time by using the plasma implantation process of FIG. 2C, in accordance with some embodiments.

FIG. 2E shows resistivity of fin structures as a function of process time by using the plasma implantation process of FIG. 2A, in accordance with some embodiments.

FIG. 3 shows two dopant profiles for two substrates with two different orientations by using a two-step plasma implantation process, in accordance with some embodiments.

FIGS. 4A-4D compare electrical results of fin structures for three different processes, in accordance with some embodiments.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

It is to be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

FIG. 1A shows an integrated circuit structure 10, in accordance with some embodiments. The illustrated integrated circuit structure 10 is formed on a portion of a substrate 20. Substrate 20 may be a silicon substrate, a germanium substrate, or a substrate formed of other semiconductor materials. Substrate 20 may be doped with a p-type or an n-type impurity. Isolation regions, such as shallow trench isolation (STI) regions 22, may be formed in or over substrate 20. Semiconductor fins 124 and 224 are formed above surfaces 23 of STI regions 22. In some embodiments, substrate 20 includes two PMOS (P-type metal-oxide-semiconductor) device regions 100 and 200, and semiconductor fins 124 and 224 in the PMOS regions respectively, as shown in FIG. 1A. In some other embodiments, device regions 100 and 200 are for NMOS (N-type MOS) devices. In yet some other embodiments, device region 100 is for an NMOS device and device region 200 is for a PMOS device, or vice versa.

In some embodiments, semiconductor fins 124 and 224 are formed by creating (or forming) shallow trench isolation (STI) regions 22, and recessing the top surface of STI regions 22 to a level lower than the original top surface of substrate 20. The remaining portions of substrate 20 between STI regions 22 thus become fins 124 and 224. In some other embodiments, semiconductor fins 124 and 224 are formed of a material different from that of substrate 20. They can be formed by recessing top portions of substrate 20 between neighboring STI regions 22 to form recesses, and re-growing a semiconductor material different from that of substrate 20 in the recesses. Top portions of STI regions 22 may then be removed, while bottom portions of STI regions 22 are not removed. As a result, the top portions of the re-grown semiconductor material between neighboring STI regions 22 become semiconductor fins 124, 224.

After fins 124 and 224 are formed, substrate 20 undergoes additional substrate processing to form FET devices. One operation in forming FET devices is doping the lightly doped source and drain (LDD) regions. Conventional LDD doping is performed by ion implantation with the assistance of ion beams. FIG. 1B shows P-type dopant ions 150, such as boron (B) ions, being directed toward substrate 20 and implanted into fins 124 and 224 to form implanted regions 148 and 248, in accordance with some embodiments. The dopants, which are ions, may be directed toward substrate 20 vertically, or tilted toward the sidewalls of fins 124 ad 224 at an angle “α”. Due to shadowing effect, the dopant profiles of implanted regions 148 and 248 are not uniform beneath the outer profiles 141, 241 (denoted with bold lines) of fins 124 and 224 respectively. Such uneven dopant profiles of implanted regions 148, 248 and other similar regions are more pronounced for advanced device technologies with high aspect ratios in the spaces between fins. The uneven dopant profiles would be maintained after dopant diffusion and would result in variation in device performance within a die (WID). Further, for advanced device technologies, such as technology nodes below 90 nanometers (nm), junction depth shallower than about 25 nm could be needed. For example, such shallow junction depth is used for FinFET (fin field effect transistor) structures with high aspect ratios, such as aspect ratios equal to or greater than about 1.3 for 22 nm technology nodes, in accordance with some embodiments. Doping by ion beams fails to achieve the requirement of shallow junction depth due to the relatively high energy of ion beams. As a result, new doping mechanisms are needed.

FIG. 1C shows P-type dopant ions 150*, such as boron (B) ions, in the plasma sheath (whose boundary is not shown) right above the surface of substrate 20, directed toward substrate 20 and implanted into fins 124 and 224 to form implanted regions 148* and 248* respectively, in accordance with some embodiments. The method of doping is called “Plasma doping” (PLAD). As shown in FIG. 1C, the dopant plasma ions 150* arrive at the substrate surface in a range of angles, instead of being at a certain angle as in the case of ion implantation by ion beams. Due to the range of arriving angles of the plasma ions, the dopant profiles 148* and 248* are more uniform beneath the outer profiles 141, 241 of semiconductor fins 124, 224. Since the plasma ions have lower energy than the ions of ion beams, shallow junction depth (such as less than about 25 nm) can be achieved.

Semiconductor fins 124 and 224 are made of crystalline or epitaxial materials. In some embodiments, the top surfaces 142 and sidewall surfaces 143 have different crystalline orientation. For example, the top surfaces 142 could be in [100] orientation and the sidewall surfaces 143 could be in [110] orientation. Crystalline surfaces with different orientations could be doped at different rates.

FIG. 2A shows a dopant profile 201 for a substrate with an [100] orientation on the substrate surface and a dopant profile 202 for another substrate with an [110] orientation on the substrate surface, in accordance with some embodiments. The measurement is taken by secondary ion mass spectroscopy (SIMS). Both substrates (N-type substrates) are doped by plasma doping (PLAD) with boron. The plasma doping was performed in a plasma doping system. An example of plasma doping systems is a PLAD system, made by Varian Semiconductor Equipment Associates Inc. of Gloucester, Mass. The doping gas is made by diluting a reactant gas mixture (15% B₂H₆ and 85% H₂), diluted by a carrier (or dilution) gas H₂. The ratio of the reactant gas to the carrier gas is about 49/80. The pressure of the plasma process is about 50 mTorr and RF (radio frequency) power is in a range from about 100 watts (W) to about 1000 W and at a radio frequency in a range from about 2 kilohertz (KHz) to about 13.6 megahertz (MHz). The substrate is not biased.

The radio frequency (RF) power for generating the plasma could be pulsed. FIG. 2B shows a diagram of power cycle of a pulsed plasma, in accordance with some embodiments. FIG. 2B shows that the RF power is turned on and off periodically. The duty ratio (power-on-time/total-time) of pulse could be in a range from about 5% to about 100%, in accordance with some embodiments. The plasma doping was performed for equal to or less than about 5 minutes. The results are taken after plasma doping and also after a rapid thermal annealing (RTA) at 950° C. for less than about 5 seconds. The results show the junction depth, Xj, is about 16.5 nm for the substrate with [110] surface and about 18.9 nm for the substrate with [100] surface. Junction depth, Xj, is measured at dopant level of about 5E18 atoms/cm³. Both junction depths, Xj, are less than the 25 nm, as required for advanced device technologies. The difference in junction depth, Xj, at [100] crystalline orientation (top surface) and at [110] crystalline orientation (sidewall surface) indicates a dependence of doping rate on the crystalline orientation.

FIG. 2C shows a dopant profile 211 for a substrate with an [100] orientation on the substrate surface and a dopant profile 212 (dotted line) for another substrate with an [110] orientation on the substrate surface, in accordance with some embodiments. The dopants are also boron. The process gas used in collecting data in FIG. 2C is similar with the exception that the carrier gas is Ar, instead of H₂. The results show that the junction depths, Xj, for both substrates are very close and both are at about 11 nm. By using Ar as a carrier gas, the dependence of the junction depth with substrate crystalline orientation disappears. The independence of junction depth from substrate crystalline orientation is more desirable for fin structures with different crystalline orientation of different surfaces of the fins.

In addition to the consideration of achieving shallow junction depth (less than about 25 nm) and independence of doping rate on crystalline orientation, a doping process also needs to be repeatable. FIG. 2D shows the resistivity data taken from the substrates of FIG. 2C (Ar as the carrier gas), in accordance with some embodiments. The resistivity data are taken from diffusion regions after the substrates are plasma doped with boron and are annealed. The data show that the resistivity varies significantly with the process time, which indicates very limited region(s) to produce repeatable results. In contrast, FIG. 2E shows the resistivity data taken from the substrate of FIG. 2A (H₂ as the carrier gas), in accordance with some embodiments. The data show that the resistivity is stable between about 120 seconds to about 250 seconds of process time, which is a fairly wide process window.

The data in FIGS. 2A and 2C-2E show that using Ar as a carrier gas removes the dependence of doping rate on crystalline orientation of the surface (i.e. [100] surface versus [110] surface). However, the resistivity data show that the process window of such process is too narrow to produce repeatable results. In contrast, the process window of the process using H₂ as a carrier (or dilution) gas is much wider and usable to produce repeatable results. However, the process of using H₂ as a carrier gas shows a dependence of doping rate on the crystalline orientation of the substrate.

FIG. 3 shows dopant profiles 301 (data with square symbol) and 302 (data with triangle symbol) for substrates with [100] surface orientation and [110] surface orientation respectively, in accordance with some embodiments. The plasma doping (PLAD) process used to generate the data in FIG. 3 uses a two-step process. The two-step process includes a first plasma doping process using Ar as a carrier gas to eliminate or reduce the dependence of doping rate on the crystalline orientation. The process condition and gas mixture for the first plasma doping process using Ar as a carrier gas has been described above for FIGS. 2C and 2D. The second plasma doping process uses H₂ as a carrier gas to achieve repeatable doping profiles from wafer to wafer, which has been described above for FIGS. 2A and 2E. The first plasma doping is performed for a duration in a range from about 10 seconds to about 100 seconds and the second plasma doping is performed for a duration in a range from about 10 seconds to about 300 seconds. In some embodiments, the duration for the second plasma is shorter than the duration of the first plasma. The data in FIG. 3 are taken after the 2-step plasma doping process and also a 950° C. thermal anneal. The thermal anneal is performed in a rapid thermal annealing system at peak temperature (950° C.) for equal to or less than about 5 seconds.

Dopant profiles 301 and 302 match pretty closely along the entire curves. The junction depth, Xj, for the substrate with [100] surface is measured to be about 12.6 nm, and the junction depth for the substrate with [110] surface is measured to be about 13.7 nm. The two junction depths are fairly close. The first-step doping plasma process using a relatively heavy carrier gas, such as Ar (atomic weight 40 amu) or Ne (atomic weight 20 amu), likely bombards the crystalline surface to make the substrate surface slightly amorphous, which eliminates or reduces the dependence of doping rate on crystalline orientation. The slightly amorphous surface allows the second-step doping process with a lighter carrier gas, such as H₂ or He, to deliver dopants deeper into the substrate repeatably. The slightly amorphous substrate surface can be re-crystallized again by the following annealing process(es) and does not impact the performance of the FETs.

FIG. 4A shows data of Isoff (nA/μm) versus Idsat (nA/μm), in accordance with some embodiments. Isoff measures the current (off current) when the gate voltage (Vg) is set at zero, and Idsat measures the current (on current at saturation region) when the source voltage (Vs) is set at zero. The data are taken from finFET devices on substrates processed with three different processes. The 1^(st) process is a reference process using the conventional ion beams to drive dopants. The results of the 1^(st) process are marked by “diamond” symbol. The 2^(nd) process is a two-step plasma doping process described above with bias voltage set at 0 volt (no bias). The results of the 2^(nd) process are marked by “square” symbol. The 3^(nd) process is a two-step plasma doping process described above with bias voltage set at 0.3 KV (no bias). The results of the 3^(nd) process are marked by “triangle” symbol. The 3^(rd) process is similar to the 2^(nd) process with the exception that the bias voltage is 0.3 KV with the substrate being negatively biased. The Idsat is measured at Isoff equal to about 100 nA/μm. The results show that the Idsat is about 665.4 nA/μm for the 1^(st) process, about 702.4 for the 2^(nd) process and about 678.9 for the 3^(rd) process. The Idsat of the 1^(st) process is the lowest and the Idsat of the 2^(rd) process is the highest. The 2^(nd) process increases Idsat by about 5.6% over the reference process (1^(st) process). The 3^(rd) process increases Idsat by about 2.0% over the reference process. The results indicate an improvement in Idsat by using a plasma doping process, especially a plasma doping process without bias voltage.

FIG. 4B shows the Idsat as a function of gate length (or gate width), in accordance with some embodiments. Lmask is the layout gate length, which could be different from actual gate lengths. However, the actual gate lengths increase with the layout gate lengths. The data in FIG. 4B show that Idsat of the 2^(nd) process is consistently higher than the Idsat of the 1^(st) and 3^(rd) processes for different gate lengths between about 0.03 μm to about 0.055 μm.

FIG. 4C shows Vtlin and Vtsat versus layout gate length (Lmask), in accordance with some embodiments. Vtlin is a measure of the gate voltage when the drain current is measurable and when the Vsource is set at zero and the Vdrain is set at 0.05V. Vtsat is a measure of the gate voltage when the drain voltage is measurable and when the Vsource is set at zero and the Vdrain is set at high value (such as greater than about 0.5 V, i.e. at saturation). The data show no significant difference of Vtlin and Vtsat between 3 different processes with gate widths between about 0.022 nm to about 0.1 nm.

FIG. 4D shows the resistance of FinFET devices as a function of gate length (L_TEM) of the measured FinFET devices, in accordance with some embodiments. L_TEM is a gate length calibrated by a transmission electron microscope (TEM). The data in FIG. 4D show resistivities for the 3 doping methods with data analyzed into linear lines and equations. The resistivity data for the 3 doping methods vary linearly with gate length.

Rs(1^(st) Process)=5397.7×L _(—) TEM+230.9   (1)

Rs(2^(nd) Process)=5255.9×L _(—) TEM+229.8   (2)

Rs(3^(rd) Process)=5347.5×L _(—) TEM+246.5   (3)

The results show no abnormality of resistances and mobilities of dopants of FinFET devices for these 3 doping methods. The slopes of equations are inversely proportional to the mobility (1/μ) of dopants. The results show that dopants for the 2^(nd) process (plasma doping with zero bias) have the highest mobility in comparison to the other two processes. The results also indicate that the 2-step plasma doping process can be used as a doping process.

The plasma doping methods and results described above indicate that a 2-step plasma doping processes have good process windows and produce good device performance data. The plasma doping process with zero bias produces better Idsat data than the process with a bias of about 0.3 KV. Both plasma doping processes, with zero bias and 0.3 KV bias, show better doping performance than the conventional ion beam doping process.

The annealing temperature used in the study above is about 950° C. Alternatively, the annealing temperature for LDD formation can be in a range from about 900° C. to about 1350° C. for a duration from milliseconds (ms) to minutes. As mentioned above, the plasma may be pulsed with duty ratio in a range from about 5% to about 100%. The RF power frequency may be in a range from about 2 KHz to about 13.6 MHz. In some embodiments, the RF power supply can have dual frequencies. The doping plasma may be generated in the processing chamber or remotely (remote plasma).

The annealing process used for collecting data in FIGS. 2A and 2C-4D is rapid thermal annealing (RTA). Alternatively, the annealing process can be laser anneal or flash anneal. The annealing time can be in a range from about 50 μs (micro seconds) to about 10 minutes. The doping gas in the example is a mixture of 15% H₂B₆ with 85% of H₂. Other ratios of gas mixtures may also be used. In addition, the boron containing gas does not need to be H₂B₆. Other types of boron-containing gas, such as BF₃, may also be used. The boron-containing gas does not need to be mixed with H₂. Other types of inert gas, such as He, Ar, Ne, Kr, Xe, may also be used. In some embodiments, N₂ may also be a carrier gas. However, heavier carrier gas, such as Ne, Ar, Kr, Xe, N₂, may be used to prepare the gas mixture for the first-step plasma doping process and lighter carrier gas, such as He or H₂, may be used for preparing the gas mixture for the second-step plasma doping process.

In some embodiments, the dopant-containing gas used in the first doping plasma, which makes the substrate surface slightly amorphous and doping process less sensitive to crystalline orientation of the substrate, is different from the dopant-containing gas used in the second doping plasma, which is used to drive the dopants deeper into the substrate. For example, if the dopant is boron, the dopant-containing gas used in the first doping plasma could be B₂H₆ and the dopant-containing gas used in the second doping plasma could be BF₃, or vice versa. The bias voltage applied on the substrate may also be turned on and off periodically to modify the doping characteristics in a manner similar to RF power being turned on and off to generate pulsed plasma, as shown in FIG. 2B. The duty ratio (power-on-time/total-time) of bias pulse could also be in a range from about 5% to about 100%, in accordance with some embodiments.

The embodiments of methods described above for doping a substrate to form shallow LDD regions are described for PMOS. Similar methods also apply for NMOS, which uses N-type dopants, such as P and As. Phosphorous-containing or As-containing gas may be used for the doping LDD regions in manner described above for using boron-containing gas to dope P-type LDD.

The embodiments of methods and structures described above for doping fin structures by plasma doping process enable formation shallow lightly doped source and drain (LDD). The methods involve a two-step plasma doping process. The first step plasma process uses a heavy carrier gas, such as a carrier gas with an atomic weight equal to or greater than about 20 amu, to make the surfaces of fin structures amorphous and to reduce the dependence of doping rate on crystalline orientation. The second step plasma process uses a lighter carrier gas, which is lighter than the carrier gas for the first step plasma process, to drive the dopants deeper into the fin structures. The two-step plasma doping process produces uniform dopant profile beneath the outer surfaces of the fin structures.

In one embodiment, a method of doping a shallow lightly doped source and drain (LDD) regions of fin structures on a substrate is provided. The method includes applying a first doping plasma on the shallow LDD regions of the fin structures. The fin structures have surfaces with more than one crystalline orientation, and a first source gas of the first doping plasma includes a first dopant-containing gas and a first carrier gas, wherein the first dopant-containing gas includes the dopant. The doping rate of the first doping plasma is significantly the same on different surfaces of the fin structures with more than one crystalline orientation. The method also includes applying a second doping plasma on the shallow LDD regions of the fin structures after the first doping plasma is applied. A second source gas of the second doping plasma includes a second dopant-containing gas and a second carrier gas, and the second doping plasma delivers the dopant deeper below surfaces of the shallow LDD regions of the fin structures.

In another embodiment, a method of doping a shallow lightly doped source and drain (LDD) regions of fin structures on a substrate is provided. The method includes applying a first doping plasma on the shallow LDD regions of the fin structures, and the fin structures have surfaces with more than one crystalline orientation. A first source gas of the first doping plasma includes a first dopant-containing gas and a first carrier gas, and the first dopant-containing gas includes the dopant. The doping rate of the first doping plasma is significantly the same on different surfaces of the fin structures with more than one crystalline orientation. The method further includes applying a second doping plasma on the shallow LDD regions of the fin structures after the first doping plasma is applied. A second source gas of the second doping plasma includes a second dopant-containing gas and a second carrier gas. The second doping plasma delivers the dopant deeper below surfaces of the shallow LDD regions of the fin structures, and the dopant profiles of the shallow LDD regions are uniform beneath the outer profiles of the fin structures. In addition, the method includes performing a thermal annealing on the substrate after the second doping plasma is applied.

In yet another embodiment, a fin field-effect transistor (FinFET) having a fin structure with a shallow lightly doped source and drain (LDD) region is provided. The fin structure has a top surface with a first crystalline orientation. Two sidewall surfaces of the fin structure have a second crystalline orientation. The shallow LDD region is uniform beneath the top surface and the two sidewall surfaces of the fin structure, and dopants in the shallow LDD region are implanted in the fin structure by a two-step plasma doping process. A first step plasma doping process of the two-step plasma doping process uses a carrier gas with an atomic weight equal to or greater than 20 amu, and the first step plasma doping process makes the top surface and the two sidewall surfaces amorphous to reduce the difference in crystalline orientation of surfaces of the fin structure to enable dopants to be implanted uniformly beneath the surfaces of the fin structures by the second-step plasma doping process.

One aspect of this description relates to a fin field-effect transistor (FinFET). The FinFET includes a substrate and a fin structure over the substrate. The fin structure comprises a lightly doped source and drain (LDD) region uniformly beneath a top surface and sidewall surfaces of the fin structure, the LDD region having a depth less than about 25 nm.

Another aspect of this description relates to a fin field-effect transistor (FinFET). The FinFET includes a substrate and a fin structure over the substrate. The fin structure comprises a lightly doped source and drain (LDD) region, and a top surface of the fin structure has a different crystal structure from a sidewall surface of the fin structure.

Still another aspect of this description relates to a method of making a fin field-effect transistor (FinFET). The method includes forming a fin structure on a substrate. The method further includes performing a pulsed plasma doping on the fin structure to form lightly doped drain (LDD) regions in the fin structure.

Various modifications, changes, and variations apparent to those of skill in the art may be made in the arrangement, operation, and details of the methods and systems disclosed. Although the foregoing invention has been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalents of the appended claims. 

What is claimed is:
 1. A fin field-effect transistor (FinFET) comprising: a substrate; and a fin structure over the substrate, wherein the fin structure comprises a lightly doped source and drain (LDD) region uniformly beneath a top surface and sidewall surfaces of the fin structure, the LDD region having a depth less than about 25 nm.
 2. The FinFET of claim 1, wherein a gate length of the FinFET ranges from about 0.03 micrometers (μm) to about 0.055 μm.
 3. The FinFET of claim 1, wherein the fin structure has an aspect ratio greater than about 1.3.
 4. The FinFET of claim 1, wherein a gate width of the FinFET ranges from about 0.022 nanometers (nm) to about 0.1 nm.
 5. The FinFET of claim 1, wherein the top surface of the fin structure has a different crystal structure from a crystal structure of the sidewall surface of the fin structure.
 6. A fin field-effect transistor (FinFET) comprising: a substrate; and a fin structure over the substrate, wherein the fin structure comprises a lightly doped source and drain (LDD) region, and a top surface of the fin structure has a different crystal structure from a sidewall surface of the fin structure.
 7. The FinFET of claim 6, wherein a depth of the LDD region from the top surface is substantially equal to a depth of the LDD region from the sidewall surface.
 8. The FinFET of claim 6, wherein a gate length of the FinFET ranges from about 0.03 micrometers (μm) to about 0.055 μm.
 9. The FinFET of claim 6, wherein the fin structure has an aspect ratio greater than about 1.3.
 10. The FinFET of claim 6, wherein a gate width of the FinFET ranges from about 0.022 nanometers (nm) to about 0.1 nm.
 11. A method of making a fin field-effect transistor (FinFET), the method comprising forming a fin structure on a substrate; performing a pulsed plasma doping on the fin structure to form lightly doped drain (LDD) regions in the fin structure.
 12. The method of claim 11, wherein performing the pulsed plasma doping comprises forming an amorphous surface structure in the fin structure.
 13. The method of claim 12, wherein performing the pulsed plasma doping further comprises recrystallizing the amorphous surface structure using an anneal process.
 14. The method of claim 12, wherein forming the amorphous surface structure comprises bombarding the fin structure with a gas, wherein the gas comprises argon or neon.
 15. The method of claim 11, wherein performing the pulsed plasma doping comprises mixing a reactant gas and a carrier gas.
 16. The method of claim 15, wherein the reactant gas comprises at least one of H₂B₆ or BF₃.
 17. The method of claim 15, wherein mixing the reactant gas with the carrier gas comprises mixing about 49 parts of reactant gas per 80 parts of carrier gas.
 18. The method of claim 11, wherein performing the pulsed plasma doping comprises performing a two-step doping process comprising: introducing a first carrier gas in a first step; and introducing a second carrier gas in a second step, wherein the second carrier gas is different from the first carrier gas.
 19. The method of claim 18, wherein introducing the first carrier gas comprises introducing at least one of Ne, Ar, Kr, Xe or N₂.
 20. The method of claim 18, wherein introducing the second carrier gas comprises introducing at least one of H₂ or He. 